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電路板季刊 2026.7       專業技術 53


            參考資料:
            1.  Novel formaldehyde-free electroless copper for plating on next-generation
               substrates.- IMAPS 2018 - 51st International Symposium on Microelectronics -
               Pasadena, CA USA - Oct. 8-11, 2018

            2.  The Formation of Nano-voids in electroless Cu Layers. MRS Advances 4 ,
               2231–2240 (2019). https://doi.org/10.1557/adv.2019.336
            3.  Nanovoid Formation at Cu/Cu/Cu Interconnections of Blind Microvias: A Field
               Study. 國際微電子學研討會(2019)

            4.  Cu Recrystallization and the Formation of Epitaxial and Non-Epitaxial Cu/Cu/
               Cu Interfaces in Stacked Blind Micro Via Structures. 2021 IEEE 71st Electronic
               Components and Technology Conference (ECTC)
            5.  To  solve  Weak-Micro  Via  High  connection  reliability  Electroless  copper  plating
               process OPC FLET PROCESS-(OKUNO)-2026

            6.  Mechanism of void growth in electroless copper plating layer of micro vias in
               high density interconnect packaging substrates. Hsieh et al. Journal of Materials
               Science: Materials in Engineering (2026) 21:5 https://doi.org/10.1186/s40712-
               025-00374-w
            7.  CHARACTARIZATION OF FORMALDEHYDE-FREE ELECTRO-LESS COPPER
               PLATING FOR SEMI-ADDITIVE PROCESS- IMAPS 2021 - 54th International
               Symposium on Microelectronics | October 11-14, 2021 | San Diego, CA USA.

            8.  T. Sharma, R. Brüning, T. Nguyen, T. Bernhard, F. Brüning,  “Properties of
               electroless Cu films optimized for horizontal plating as a function of deposit
               thickness," in Microelectronic Engineering, 2015, 140, pp. 38–46..
            9.  H. Heer, R. Wong," Reliability of stacked microvia", IPC APEX EXP
               Conference Proceedings (2015)

            10. 麥德美SHADOW PLUS技術資料
            11. ATO Bond Film技術資料

            12. 林定皓-電路板濕製程技術與應用-2019版
            13. 景碩堆疊孔實驗報告-2021卓育萱

            14. 專利:US 2004/0253450 A1-Pub. Date: Dec. 16, 2004
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