Page 46 - 電路板季刊第107期

44 專業技術 以臨場升溫AFM揭示3D IC異質接合於尺寸微縮下之挑戰

顯著下降，影響異質接合的製程良率，製程窗口亦隨著尺寸微縮而縮小，對CMP控制
提出更高要求。為提升異質接合的製程良率，可透過更精確的化學機械平坦化控制、
最佳化退火溫度調整來提高良率。本研究提供的數據與方法，將有助於未來異質接合
技術的發展與優化。

Reference

[1] R.W. Keyes, Physical limits of silicon transistors and circuits, Reports on
Progress in Physics, 68 (2005) 2701.

[2] C. Chen, D. Yu, K.-N. Chen, Vertical interconnects of microbumps in 3D
integration, MRS bulletin, 40 (2015) 257-263.
[3] H.-E. Lin, W.-L. Chiu, H.-H. Chang, Y.-T. Yang, C. Chen, Revealing
challenges of downscaling effects on Cu thermal expansion in advanced hybrid
bonding using in-situ AFM, Applied Surface Science, (2025) 162539.

[4] H.-E. Lin, D.-P. Tran, W.-L. Chiu, H.-H. Chang, C. Chen, In-situ
measurement of thermal expansion in Cu/SiO2 hybrid structures using atomic
force microscopy at elevated temperatures, Applied Surface Science, 662 (2024)
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